Low/Medium Voltage MOSFETs | FDD306P

P 沟道 1.8V 指定 PowerTrench® MOSFET，-12V，-6.7A，28mΩ

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概览

此 P 沟道 1.8V 指定 MOSFET 采用先进的低压 PowerTrench 工艺。此产品针对电池管理进行了优化。

  • This product is general usage and suitable for many different applications.

  • -6.7A，-12V
  • RDS(ON) = 28 mΩ @ VGS = -4.5V
  • RDS(ON) = 41 mΩ @ VGS = -2.5V
  • RDS(ON) = 90 mΩ @ VGS = -1.8V
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD306P

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-12

-

8

-1.5

-6.7

52

41

28

-

15

1290

-

-

-

-

$0.3823

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可靠性数据

Die Related Summary Data

Device: FDD306P

Equivalent to wafer fab process: TT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TT

6

2104831460

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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