功率 MOSFET,N 沟道,UniFETTM,500 V,6 A,900 mΩ,DPAK

Last Shipments

概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻,提供更佳的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电力转换器应用,如功率系数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.

  • RDS(on) = 900mΩ (最大值)@ VGS = 10V, ID = 3A
  • 低栅极电荷(典型值 12.8nC)
  • 低 Crss(典型值 9pF)
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 处理能力

Tools and Resources

Product services, tools and other useful resources related to FDD6N50

Buy/Parametrics Table

搜寻

Close Search

产品:

2

分享

产品系列:

可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

500

900

±30

5

6

89

-

-

-

12.8

720

5.8

1.7

95

9

Price N/A

More Details

FDD6N50TM-WS

Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

500

900

±30

5

6

89

-

-

-

12.8

720

5.8

1.7

95

9

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.