双 N 和 P 沟道,PowerTrench® MOSFET,40V

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此类双 N 和 P 沟道增强型功率 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • N-Channel: 40V, 20A, 24mΩ
  • P-Channel: -40V, -20A, 54mΩ
  • Q1: N 沟道
  • 最大值 RDS(on) = 24 mΩ(VGS = 10 V、ID = 9.0 A
  • 最大值 RDS(on) = 30mΩ(VGS = 4.5V, ID = 7.0A
    Q2: P 沟道
  • Q2: P-Channel
  • 最大值 RDS(on) = 54 mΩ(VGS = -10 V、ID = -6.5 A
  • 最大值 RDS(on) = 70 mΩ(VGS = -4.5 V、ID = -5.6 A
  • 快速开关
  • 符合RoHS标准

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD8424H

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Lifetime

CAD Model

Pb

A

H

P

DPAK-5

1

260

REEL

2500

N

±40

N:24,P:54

Complementary

Dual

±20

±3

±20.0

N:30, P: 35

-

N:30,P:70

-

17

N: 750, P: 1000

$0.53

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