Low/Medium Voltage MOSFETs | FDD8444L_F085

40 V、50 A、3.8 mΩ、l DPAK
N 沟道 PowerTrench®

Obsolete

数据表

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概览

N-Channel PowerTrench® MOSFET, 40V, 50A, 6.0mΩ,

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  • 典型 rDS(on) = 3.8 mΩ （VGS = 5 V、ID = 50 A）
  • VGS = 5V时，典型Qg(tot) = 46nC
  • 低米勒电荷
  • 低 Qrr体二极管
  • UIS能力（单脉冲/重复脉冲）
  • 符合AEC Q101
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD8444L-F085

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Low-Medium Voltage

Logic

0

Single

0

40

5.2

±20

3

50

153

-

6.5

-

46

5530

21

29

605

400

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDD8444L-F085

Equivalent to wafer fab process: T5

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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