Low/Medium Voltage MOSFETs | FDD8453LZ_F085

40 V、50 A、5.0 mΩ、DPAK
N 沟道 PowerTrench®

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概览

此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺生产，这一先进工艺是专为最大限度地降低通态电阻和开关损耗而定制的。 旨在为增强ESD电压电平而增加了G-S齐纳管。

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  • 典型 rDS(on) = 5 mΩ （VGS = 10 V、ID = 15 A）
  • VGS = 4.5V，ID = 13A时，典型rDS(on) = 6mΩ
  • HBM ESD 保护等级> 7 kV 典型值
  • 符合RoHS标准
  • 符合 AEC Q101

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

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FDD8453LZ-F085

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Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Low-Medium Voltage

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40

5

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50

118

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6

29

60

2935

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340

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可靠性数据

Die Related Summary Data

Device: FDD8453LZ-F085

Equivalent to wafer fab process: T5

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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