N 沟道,PowerTrench® MOSFET,40 V,90 A,3.2 mΩ

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N 沟道,PowerTrench® MOSFET,40 V,90 A,3.2 mΩ

  • This product is general usage and suitable for many different applications.
  • 典型 RDS(on)=2.3 mΩ(VGS=10 V、ID=80 A)
  • 典型 Qg(tot)=42 nC(VGS=10 V、ID=80 A)
  • UIS 能力
  • 符合 RoHS 标准
  • 符合 AEC Q101 标准

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD9409-F085

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

40

3.2

N-Channel

Single

±20

4

90

150

-

-

-

42

3130

$0.6693

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