Small Signal MOSFETs | FDH047AN08A0

N 沟道，PowerTrench® MOSFET，75V，80A，4.7mΩ

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N 沟道，PowerTrench® MOSFET，75V，80A，4.7mΩ

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  • 其他数据处理

  • RDS(on) = 4.0mΩ（典型值）@ VGS = 10V, ID = 80A
  • QG(tot) = 92nC（典型值）@ VGS = 10V
  • 低米勒电荷
  • 低 Qrr体二极管
  • UIS 能力（单脉冲和重复脉冲）

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDH047AN08A0

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247

Small Signal

Standard

0

Single

0

80

4.7

±20

2.5

80

310

-

-

-

92

6600

21

54

1000

240

$3.4447

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可靠性数据

Die Related Summary Data

Device: FDH047AN08A0

Equivalent to wafer fab process: 2C

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2C

0

3698398665

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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