Low/Medium Voltage MOSFETs | FDMA008P20LZ

单 P 沟道 PowerTrench® MOSFET -20V，-2.5A，13mΩ

Obsolete

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概览

此器件专门设计用于蜂窝手持机和其他超便携应用中的电池充电或负载开关。它具有一个带有低导通电阻的 MOSFET，且可针对 ESD 提供齐纳二极管保护。就其物理尺寸而言，MicroFET 2x2 封装具有出色的热性能，非常适合线性模式应用。

  • This product is general usage and suitable for many different applications.

  • 最大 rDS(on) = 13 mΩ（VGS = -4.5 V、ID = -2.5 A
    ）
  • 最大 rDS(on) = 16 mΩ（VGS = -2.5 V、ID = -1.4 A
    ）
  • 最大 rDS(on) = 20 mΩ（VGS = -1.8 V、ID = -1.0 A
    ）
  • 最大 rDS(on) = 30 mΩ（VGS = -1.5 V、ID = -0.85 A
    ）
  • 薄型 – 最大 0.8 mm，采用新型 MicroFET 封装2x2 mm
  • HBM ESD 保护电平>1 kV 典型值（注 3）
  • 无卤素化合物和锑氧化物
  • 符合 RoHS 标准

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MSL Temp (°C)

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA008P20LZ

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Obsolete

CAD Model

Pb

A

H

P

PQFN-6

483AV

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

-20

-

8

-1.4

-2.5

2.4

16

13

10

28.5

3131

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMA008P20LZ

Equivalent to wafer fab process: U4

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

U4

0

1599145130

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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