双 N 沟道,PowerTrench® MOSFET,30V,3.8A,68mΩ

Obsolete

概览

此器件专门设计为手机和其他超便携应用中双开关要求的单封装方案。它具有两个独立的 N 沟道 MOSFET,且均具有低导通电阻,可实现最低的导电损耗。MicroFET 2x2 封装对于其物理尺寸来说提供了卓越的热性能,非常适合线性模式应用。

  • 手机
  • 便携设备

  • VGS = 4.5 V且ID = 3.8 A时,最大rDS(on) = 68 m
  • VGS = 2.5 V且ID = 3.4 A时,最大rDS(on) = 88 m
  • 在VGS = 1.8 V且ID = 2.9 A时,最大值rDS(on) = 123 mΩ
  • 薄型 – 最厚0.8mm – 采用新的MicroFET 2x2 mm封装
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Dual

0

30

-

12

1.5

3.8

1.5

Q1=Q2=88

Q1=Q2=68

20

3.7

282

-

-

-

-

Price N/A

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