Low/Medium Voltage MOSFETs | FDMA3028N

双 N 沟道，PowerTrench® MOSFET，30V，3.8A，68mΩ

Obsolete

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概览

此器件专门设计为手机和其他超便携应用中双开关要求的单封装方案。它具有两个独立的 N 沟道 MOSFET，且均具有低导通电阻，可实现最低的导电损耗。MicroFET 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。

  • 手机
  • 便携设备

  • VGS = 4.5 V且ID = 3.8 A时，最大rDS(on) = 68 mΩ
  • VGS = 2.5 V且ID = 3.4 A时，最大rDS(on) = 88 mΩ
  • 在VGS = 1.8 V且ID = 2.9 A时，最大值rDS(on) = 123 mΩ
  • 薄型 – 最厚0.8mm – 采用新的MicroFET 2x2 mm封装
  • 符合RoHS标准

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA3028N

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Dual

0

30

-

12

1.5

3.8

1.5

Q1=Q2=88

Q1=Q2=68

20

3.7

282

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMA3028N

Equivalent to wafer fab process: RF

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RF

0

1120069689

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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