FDMC7660

N 沟道，PowerTrench® MOSFET，30V，20A，2.2mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻。此器件适用于笔记本电脑和便携式电池组中常见的电源管理和负载开关应用。

应用

This product is general usage and suitable for many different applications.

特性

V_GS= 10V，I_D = 20A时，最大r_DS(on) = 2.2mΩ
V_GS= 4.5 V，I_D = 18 A时，最大r_DS(on) = 3.3mΩ
高性能技术可实现极低的r_DS(on)
终端是符合RoHS标准的无铅产品

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC7660

Active

PQFN-8

483AK

260

REEL

3000

2.2

N-Channel

Single

2.5

3.3

3630

$0.722

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MOSFETs | FDMC7660

N 沟道，PowerTrench® MOSFET，30V，20A，2.2mΩ

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