Low/Medium Voltage MOSFETs | FDMC8030

双 N 沟道，Power Trench® MOSFET，40V，12A，10mΩ

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数据表
CAD Model

CAD模型

概览

此器件在一个双 Power 33 (3 mm X 3 mm MLP) 封装中包括了两个 40V N 沟道 MOSFET。该封装针对卓越热性能进行了改善。

  • 服务器
  • VGS = 10 V，ID = 12 A时，最大rDS(on) = 10mΩ
  • VGS = 4.5 V，ID = 10 A时，最大rDS(on) = 14mΩ
  • VGS = 3.2 V，ID = 4 A时，最大rDS(on) = 28mΩ
  • 终端无引线且符合RoHS标准

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可订购器件:

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8030

Contact Sales

Lifetime

CAD Model

Pb

A

H

P

WDFN-8

511DG

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Dual

0

20

Q1=Q2=10

±20

2.8

12

14

-

Q1=Q2=14

-

12

1462

2.5

9

321

20

$0.4721

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