Low/Medium Voltage MOSFETs | FDMC8622

N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，16A，56mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺针对 rDS(on)、开关性能和坚固性进行了优化。

  • This product is general usage and suitable for many different applications.
  • 栅极屏蔽 MOSFET 技术
  • VGS = 10 V，ID = 4 A时，rDS(on) = 56 mΩ（最大值）
  • VGS = 6 V，ID = 3 A时，rDS(on)= 100 mΩ（最大值）
  • 高性能沟道技术可实现极低的rDS(on)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装
  • 100% 经过 UIL 测试
  • 终端无引线且符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8622

Contact Sales

Active

CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

100

56

±20

4

16

31

-

-

-

3

302

1.4

28

72.5

96

$0.5456

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