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25 V,不对称双 N 沟道,PowerTrench® Power Clip MOSFET
Obsolete
此器件 在一个 双封装中 包括了 两 个特制的 N 沟道 MOSFET。开关节点已经内部联接, 可实现 同步降 压 转换器 的轻松布 置和布线 。 控制 MOSFET (Q1) 和同步 SyncFET (Q2) 可 提供最佳 功率 能效。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Obsolete
Pb
A
H
P
PQFN-8
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
Power 56 (SO-8FL)
Low-Medium Voltage
Logic
0
Dual
0
25
Q1 = 3.25 ; Q2 = 0.92
16
3
Q1 = 69 ; Q2 = 165
Q1 = 26 ; Q2 = 42
-
Q1 = 4 ; Q2 = 1.2
Q1 = 9.7 ; Q2 = 35
Q1 = 21 ; Q2 = 75
Q1 = 1370 ; Q2 = 5105
Q1 = 2 ; Q2 = .9
Q1 = 12 ; Q2 = 55
Q1 = 625 ; Q2 = 1810
Q1 = 44 ; Q2 = 173
Price N/A
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可靠性数据
Die Related Summary Data
Device: FDMS001N025DSD
Equivalent to wafer fab process: RP
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
RP
0
239536096
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)