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25V PowerTrench® 功率级非对称双 N 沟道 MOSFET
Obsolete
该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接,能够为同步降压转换器提供简单的布局和布线。 控制 MOSFET (Q1) 和同步 SyncFET™(Q2) 旨在提供最优功效。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Obsolete
Pb
A
H
P
PQFN-8
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
Power 56 (SO-8FL)
Low-Medium Voltage
Logic
0
Dual
0
25
Q1: 5.6, Q2: 1.6
20
Q1:2.7, Q2:3
Q1: 15.0, Q2: 30.0
Q1:2.2, Q2:2.5
-
Q1: 8.5, Q2: 2.4
21
27
4255
-
-
-
-
Price N/A
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可靠性数据
Die Related Summary Data
Device: FDMS3600AS
Equivalent to wafer fab process: RM,U4
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
RM,U4
0
453805928
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)