Low/Medium Voltage MOSFETs | FDMS3602S

不对称双 N 沟道 MOSFET，PowerTrench® 功率级，25V

Obsolete

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概览

此器件在一个双 PQFN 封装中包括了两个特制的 N 沟道 MOSFET。开关节点已经内部联接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET (Q2) 可提供最佳功率能效。

  • This product is general usage and suitable for many different applications.

  • Q1: N 沟道
  • 最大值RDS(on) = 8.1mΩ（VGS = 4.5 V, ID = 14 A
    ）Q2： N 沟道
  • 低电感封装缩短了上升/下降时间，从而减少了开关损耗
  • MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS3602S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AJ

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Dual

0

25

Q1: 5.5, Q2; 2.2

20

3

Q1: 15.0, Q2: 26.0

Q1:2.2, Q2: 2.5

-

Q1: 8.1, Q2; 3.4

27

21

3097

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMS3602S

Equivalent to wafer fab process: RM,U4

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RM,U4

0

453805928

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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