Small Signal MOSFETs | FDN360P

PowerTrench MOSFET，单 P 沟道

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CAD Model

CAD模型

概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低压和电池供电应用。

  • This product is general usage and suitable for many different applications.
  • Battery Powered Circuits
  • -2 A，-30 V
  • RDS(on) = 80 mΩ @ VGS = -10 V
  • RDS(on) = 125 mΩ @ VGS = -4.5 V
  • 低栅极电荷（6.2nC，典型值）
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。

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可订购器件:

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN360P

Contact Sales

Active

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-30

80

20

-3

-2

0.5

-

125

3

6.2

298

-

-

-

-

$0.1161

More Details

FDN360P-NBGT003B

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

-30

80

20

-3

-2

0.5

-

125

3

6.2

298

-

-

-

-

Price N/A

More Details

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