方案
按技术分类
此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的,特别适用于最大程度降低导通电阻,同时保持低门极电荷,实现卓越的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低压和电池供电应用。
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可订购器件:
2
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDN360P
Active
Pb
A
H
P
SOT-23-3
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
Single
0
-30
80
20
-3
-2
0.5
-
125
3
6.2
298
-
-
-
-
$0.1161
More Details
FDN360P-NBGT003B
Obsolete
Pb
A
H
P
SOT-23-3
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
Single
0
-30
80
20
-3
-2
0.5
-
125
3
6.2
298
-
-
-
-
Price N/A
More Details
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