30V,不对称双 N 沟道,PowerTrench® Power Clip MOSFET

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此器件在一个双封装中包括了两个特制的 N 沟道 MOSFET。开关节点已经内部连接,可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET™ (Q2) 可提供最佳功率效率。

  • Computing
  • Communications
  • General Purpose Point of Load
  • Q1: N 沟道
  • 最大值 rDS(on) = 4.6 mΩ(VGS = 10 V, ID = 17 A
  • 最大值 rDS(on) = 6.5 mΩ(VGS = 4.5 V, ID = 14 A
    )Q2: N 沟道
  • 最大值 rDS(on) = 2.4 mΩ(VGS = 10 V, ID = 25 A
  • 最大值 rDS(on) = 3.0 mΩ(VGS = 4.5 V, ID = 22 A

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDPC5030SG

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

30

Q1: 5.0, Q2: 2.4

N-Channel

Dual

12

3

Q1:56.0, Q2: 84.0

Q1: 23, Q2: 29

-

3

25

18

2730

$0.7062

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