P 沟道,1.5V 指定,PowerTrench® WL-CSP MOSFET,-20V,-1A,85mΩ

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FDZ191P 基于先进的 1.5V PowerTrench 工艺和“低螺距”WLCSP 封装工艺而设计,可最大程度缩小 PCB 空间和降低 rDS(on)。这种先进的 WLCSP MOSFET 体现了封装技术的突破,使得该器件能够将优异的传热特性、超小型封装、低门极电荷和低 rDS(on) 等诸多性能结合在一起。

  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection

  • 最大rDS(on) = 85mΩ (VGS = -4.5V, ID = -1A)
  • 最大 rDS(on) = 123 mΩ(VGS = -2.5 V、ID = -1 A 时)
  • 最大 rDS(on) = 200 mΩ(VGS = -1.5 V、ID = -1 A 时)
  • 仅占1.5mm²的PCB空间,比2 x 2 BGA所占空间少50%
  • 超薄封装: 安装至PCB时,高度小于0.65 mm
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Last Shipments

CAD Model

Pb

A

H

P

WLCSP-6

1

260

REEL

5000

N

P-Channel

NA

NA

Low-Medium Voltage

Logic

0

Single

0

-20

-

8

-1.5

-1

1.9

123

85

18

9

800

-

-

-

-

Price N/A

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