P 沟道,1.5 V 指定,PowerTrench® 薄款 WL-CSP MOSFET,-20V,-3.7A,75mΩ

Obsolete

概览

FDZ371PZ 基于先进的 1.5 V PowerTrench 工艺和“低间距”薄款 WLCSP 封装工艺而设计,可最大程度缩小 PCB 空间和降低 rDS(on)。这种先进的 WLCSP MOSFET 体现了封装技术的突破,使得该器件能够将优异的传热特性、超小型封装、低门极电荷和低 rDS(on) 等诸多性能结合在一起。

  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection

  • VGS = -4.5 V,ID = -2.0 A时,最大rDS(on) = 75 mΩ
  • VGS = -2.5 V,ID = -1.5 A时,rDS(on) = 90 mΩ(最大值)
  • VGS = -1.8 V,ID = -1.0 A时,最大rDS(on) = 110 mΩ
  • VGS = -1.5 V,ID = -1.0 A时,最大rDS(on) = 150 mΩ
  • 仅占1.0 mm2的PCB空间。比2 x 2 BGA所占空间少30%。
  • 超薄封装: 安装至PCB时,高度小于0.4 mm
  • HBM ESD保护等级>4.4kV,典型值(注3)
  • 符合RoHS标准

Tools and Resources

Product services, tools and other useful resources related to FDZ371PZ

Buy/Parametrics Table

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

WLCSP-4

1

260

REEL

5000

N

P-Channel

NA

NA

Low-Medium Voltage

Logic

0

Single

0

-20

-

8

-1

-3.7

1.7

90

75

9

12

750

-

-

-

-

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.