IGBTs | FGA20N120FTD

IGBT，1200V，20A，场截止沟槽

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概览

安森美半导体的 1200V 沟槽 IGBT 采用先进的场截止沟槽技术，可为软开关应用提供卓越的导通和开关性能。该器件可在并联配置中运行，且具有卓越的雪崩坚固性。该器件适用于感应加热和微波炉。

  • 消费型设备
  • 场截止沟道技术
  • 高速开关
  • 低饱和电压：VCE(sat) =1.6V @ IC = 20A
  • 高输入阻抗
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

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FGA20N120FTDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

20

1.6

1.3

0.71

0.42

485

48

137

-

-

298

Yes

Price N/A

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