IGBTs | FGH40T70SHD

IGBT，700 V，40A，场截止沟槽

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概览

安森美半导体的新型场截止第 3 代 IGBT 系列采用新型场截止 IGBT 工艺，为太阳能逆变器、UPS、焊接机、电信、ESS 和 PFC 等低导通和开关损耗至关重要的应用。

  • 最大结温： TJ=175°C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.7 V（典型值） @ IC=40 A
  • 部件 100% 经过 ILM检测(1)
  • 高输入阻抗
  • 快速开关
  • 紧密的参数分布
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH40T70SHD-F155

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

N

-

700

-

-

2

0.271

1.15

-

-

69

-

-

268

-

Price N/A

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