IGBTs | FGH50N3

IGBT，300 V，SMPS

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概览

此 IGBT 采用安森美半导体的平面工艺，适用于低导通损耗至关重要的、在高频率下运行的多种高电压开关应用。此器件针对中等频率开关模式电源进行了优化。

  • 其他工业
  • 低饱和电压：VCE(sat) = 1.4V（最大值）
  • Low EOFF = 6.6µJ/A
  • SCWT = 8µs@ = 125°C
  • 300V开关SOA能力
  • 高于 50A 电流的正温度系数

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Package Type

Case Outline

MSL Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH50N3

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

300

75

1.3

-

0.92

0.13

-

-

180

8

800

463

No

Price N/A

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