IGBTs | FGH80N60FD2

IGBT，600V，场截止

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概览

安森美半导体的场截止 IGBT 采用新型场截止 IGBT 工艺，为电感加热和 PFC 等务必保证低导通和开关损耗的应用提供优异性能。

  • 消费型设备

  • 高电流能力
  • 低饱和电压：VCE(sat) =1.8V @ IC = 40A
  • 高输入阻抗
  • 快速开关
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH80N60FD2TU

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.8

1.2

0.52

1

125

4.8

120

-

-

290

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH80N60FD2TU

Equivalent to wafer fab process: 3B,IO

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IO

0

819278237

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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