IGBT,600V,5A,场截止

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安森美半导体的新型场截止 IGBT 系列采用新型场截止 IGBT 技术,为低导通损耗至关重要的 HID 镇流器提供了最佳性能。

  • 其他工业
  • 高电流能力
  • 低饱和电压:VCE(sat) =1.7V @ IC = 5A
  • 高输入阻抗
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGP5N60LS

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

-

600

5

1.7

-

130

38

-

-

18.3

-

-

83

No

Price N/A

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