IGBT,650 V,场截止沟槽

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概览

安森美半导体的新型场截止 IGBT 系列采用新型场截止 IGBT 工艺,为 IPL(强脉冲光)提供了最佳性能。

  • 高电流能力
  • 低饱和电压: VCE(sat) =1.5 V(典型值) (IC = 30 A)
  • 高输入阻抗
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGPF4565

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

N

-

650

170

1.5

-

-

-

-

-

40.3

-

-

30

No

Price N/A

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