General Purpose and Low VCE(sat) Transistors | FJP1943

PNP外延硅晶体管

Obsolete

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概览

  • This product is general usage and suitable for many different applications.

  • 高电流能力： IC =-15A。
  • 高功耗： 80瓦。
  • 高频率： 30MHz.
  • 高电压： VCEO=-250V
  • 宽S.O.A可实现可靠操作
  • 极佳的增益线性度可实现低THD。
  • FJP5200的补充器件
  • 提供完整的热SPICE模型和电气SPICE模型。
  • 相同的晶体管还可用于： TO264封装，2SA1943/FJL4215： 150W -- TO3P封装，2SA1962/FJA4213： 130W -- TO220F封装，FJPF1943： 50瓦
  • 高保真音频输出放大器
  • 通用功率放大器

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MSL Temp (°C)

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJP1943RTU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

PNP

General Purpose

3

15

230

230

5

-

1.5

55

160

30

80

Price N/A

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可靠性数据

Die Related Summary Data

Device: FJP1943RTU

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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