Low/Medium Voltage MOSFETs | FQB11P06

功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，D2PAK

Obsolete

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概览

此 P 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • 传动系

  • -11.4A, -60V, RDS(on) =175mΩ（最大值）@VGS = -10 V, ID = -5.7A
  • 低栅极电荷（典型值13nC）
  • 低 Crss（典型值45pF)
  • 100% 经过雪崩击穿测试
  • 175°C最大结温额定值"

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQB11P06TM

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

P-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

-60

175

±25

-4

-11.4

53

-

-

-

13

420

6.3

260

195

45

Price N/A

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可靠性数据

Die Related Summary Data

Device: FQB11P06TM

Equivalent to wafer fab process: 3D

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3D

10

304347029

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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