IGBTs | HGTG20N60B3D

600V，PT IGBT

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HGTG20N60B3D 是一款第三代 MOS 门极高电压开关器件，组合了 MOSFET 和双极晶体管的最佳特性。此器件具有 MOSFET 的高输入阻抗，以及双极晶体管的低导通状态损耗。低得多的导通状态电压降在 25°C 和 150°C 之间仅存在少量变化。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如： 交流和直流电机控制、电磁阀电源和驱动器、继电器和接触器。

  • 其他工业
  • 40A、600 V，TC=25°C
  • 典型下降时间： 150°C 时为 140 ns
  • 短路额定值
  • 低导通损耗
  • 超快反向并联二极管

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HGTG20N60B3D

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TO-247-3

340CK

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450

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600

20

1.8

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