IGBTs | HGTP12N60A4D

600V，SMPS IGBT

Obsolete

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概览

HGTP12N60A4D 结合了 MOSFET 的高输入阻抗，以及双极晶体管的低导通状态损耗最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件适用于 UPS 和焊接机等快速开关应用。

  • 不间断电源

  • 23A, 600V @ TC = 110°C
  • 低饱和电压：V CE(sat) = 2.0 V，需 I C = 12 A
  • 典型下降时间............TJ = 125°C时为70ns
  • 低传导损耗

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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HGTP12N60A4D

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

23

2

-

-

-

18

-

-

-

-

-

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTP12N60A4D

Equivalent to wafer fab process: 2F,3B

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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