N 沟道,逻辑电平,UltraFET 功率 MOSFET,60V,20A,43mΩ

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N 沟道,逻辑电平,UltraFET Power MOSFET,60V,20A,43mΩ

  • This product is general usage and suitable for many different applications
  • 超低导通电阻
  • 模拟模型
  • 峰值电流与脉宽曲线
  • UIS额定值曲线
  • 开关时间与RGS曲线的关系

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

HUFA76419D3ST

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Lifetime

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

60

37

N-Channel

Single

±16

3

20

63

-

46

-

23

900

Price N/A

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