General Purpose and Low VCE(sat) Transistors | KSD1692

NPN硅达林顿晶体管

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概览

  • This product is general usage and suitable for many different applications.

  • 高DC电流增益
  • 低集电极饱和电压
  • 在E-C处内置一个阻尼二极管
  • 高功耗：PC= 1.3 W (Ta=25°C)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSD1692YS

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

BLKBG

2000

Y

NPN

General Purpose

1.2

3

100

150

8

2

-

4000

12000

-

15

$0.276

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可靠性数据

Die Related Summary Data

Device: KSD1692YS

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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