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安森美半导体的 J 系列硅光电倍增传感器 (SiPM) 针对高性能计时应用进行了优化,如 ToF-PET(飞行时间正电子发射层析成像)。由于提高了微单元密度,J 系列传感器可以实现 50% 的光电检测效率 (PDE),灵敏度可扩展到紫外线。该系列具有行业领先的低低暗计数率 50 kHz/mm2,并且因为此类传感器是使用大容量 CMOS 硅工艺生产的,所以它们具有 ±250 mV 的卓越中断电压一致性。 J 系列提供在 TSV 芯片级封装中封装的 3 mm、4 mm 和 6 mm 尺寸,符合行业标准的无铅回流焊接工艺。J 系列还具有安森美半导体独特的快速输出,适用于快速计时功能。
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MICROFJ-30020-TSV-TR
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MICROFJ-30020-TSV-TR1
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MICROFJ-30035-TSV-TR
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MICROFJ-30035-TSV-TR1
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MICROFJ-40035-TSV-TR
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MICROFJ-40035-TSV-TR1
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