General Purpose and Low VCE(sat) Transistors | MJE200

5.0 A，25 V，NPN 双极功率晶体管

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概览

该双极功率晶体管适用于低电压、低功率和高增益音频放大器应用。MJE200 (NPN) 和 MJE210 (PNP) 为互补器件。

  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain -
    hFE = 70 (Min) @ IC = 500 mAdc
    hFE = 45 (Min) @ IC = 2.0 Adc
    hFE = 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product -
    fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE200

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

1.8

5

25

-

-

-

-

45

180

65

15

Price N/A

More Details

MJE200G

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Active

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

Y

NPN

General Purpose

1.8

5

40

-

8

2.5

1.6

45

180

65

15

$0.3067

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