Gate Drivers | NCP81151

MOSFET 驱动器，可兼容 VR12.5，同步降压

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概览

NCP81151 是一款高性能双 MOSFET 门极驱动器，适用于驱动同步降压转换器中高压侧和低压侧电源 MOSFET的门极。它能够驱动高达 3.0 nF 的负载，传播延迟为 25 ns，转换时间为 25 ns。自适应防交叉导通和节电运行电路可为笔记本电脑和台式机系统提供低开关损耗和高能效方案。电源电压较低时，UVLO 功能可保证低输出。

  • Vcore Power

  • Notebooks

  • Faster Rise and Fall Times
  • Output Disable Control Turns Off Both MOSFETs

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

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NCP81151MNTAG

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CAD Model

Pb

A

H

P

DFN-8

506AA

1

260

REEL

3000

N

MOSFET

2

Half-Bridge

Junction Isolation

35

6.5

16

11

-

-

-

-

-

Price N/A

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NCP81151MNTBG

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Active

CAD Model

Pb

A

H

P

DFN-8

506AA

1

260

REEL

3000

N

MOSFET

2

Half-Bridge

Junction Isolation

35

6.5

16

11

-

-

-

-

-

$0.1376

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可靠性数据

Die Related Summary Data

Device: NCP81151MNTBG

Equivalent to wafer fab process: ONC25

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

ONC25

1

2712519294

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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