This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
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NGTB40N120FL2WG
Active
Pb
A
H
P
TO-247
NA
0
TUBE
30
N
-
1200
40
2
2
1.1
3.4
240
18
313
10
-
535
Yes
$4.1495
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