IGBTs | NGTB40N60FL2
概览
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
- Solar Inverters
- Uninterruptable Power Supplies (UPS)
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 5µs Short−Circuit Capability
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Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
600
80
1.7
2.2
0.44
0.97
72
6.7
170
5
-
366
Yes
Price N/A
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