IGBT,PFC,高频率,30 A,600 V

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概览

此绝缘门双极晶体管 (IGBT) 采用耐用和成本高效的沟槽结构,在要求较高的开关应用中提供卓越的性能,还能提供低导通状态电压和最低的开关损耗。

  • Low Saturation Voltage using Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for High Speed Switching
  • 5µs Short Circuit Capability

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTG30N60FLWG

Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

600

30

1.65

-

0.28

0.7

-

-

170

5

-

167

No

Price N/A

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