Protected MOSFETs | NID6002N

自我保护 MOSFET 65 V，11 A，210 mΩ 单 N 沟道，带温度和电流限值

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NID6002N 属于先进的功率 MOSFET 系列，使用安森美半导体最新的智能 MOSFET 技术工艺。集成的温度和电流限值一起提供短路保护。该器件具有集成的漏极-门极箝位，使其能够耐受雪崩模式下的高能量。该箝位还可针对非预期的瞬变电压提供附加安全裕度。静电 (ESD) 保护通过集成的门极-源极箝位提供。

  • General use Automotive Driver
  • Short circuit protection
  • Over-temperature protection with automatic restart
  • Gate-Drain clamp

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NID6002NT4

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

N

N-Channel

65

6.5

210

2.5

Price N/A

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NID6002NT4G

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CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

N-Channel

65

6.5

210

2.5

$0.5333

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