General Purpose and Low VCE(sat) Transistors | NSS40300MD

低饱和压晶体管，双 PNP，40 V，6.0 A

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安森美半导体的 e2 PowerEdge 系列低饱和压双极晶体管是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。典型应用有便携式和电池供电产品（例如蜂窝电话和无绳电话、PDA、计算机、打印机、数码相机和 MP3 播放器）中的 DC-DC 转换器和功率管理。其它应用有大容量存储产品（例如磁盘驱动器和磁带驱动器）中的低压电机控制。在汽车行业中，它们可用于安全气囊部署和各种仪表盘。高电流增益允许 e2PowerEdge 器件直接从 PMU 的控制输出驱动，而线性增益 (Beta) 使其成为模拟放大器的理想组件。

  • Current Mirrors
  • Differential Amplifiers
  • DC-DC Converters
  • Power management in portable and battery powered products
  • Cellular and cordless phones
  • PDAs
  • Current Gain Matching to 10%
  • Base Emitter Voltage Matched to 2 mV
  • This is a Pb-Free Device
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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PTM Max (W)

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NSS40300MDR2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

Y

Dual PNP

Low VCE(sat)

0.095

3

40

40

7

0.9

0.75

220

-

100

0.576

$0.3253

More Details

NSV40300MDR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

Y

Dual PNP

Low VCE(sat)

0.095

3

40

40

7

0.9

0.75

220

-

100

0.576

$0.3408

More Details

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