General Purpose and Low VCE(sat) Transistors | NSS60101DMT

双，60V，1A，低饱和压，NPN 晶体管，WDFN6

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安森美半导体的 e2PowerEdge 低饱和压晶体管系列是具有超低饱和电压 (VCE(sat)) 和高电流增益能力的微型表面贴装器件，采用小外形 2x2mm 塑料无引线封装。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。 在汽车行业中，它们可用于安全气囊部署和各种仪表盘。高电流增益允许 e2PowerEdge 器件直接从 PMU 的控制输出驱动，而线性增益 (Beta) 使其成为模拟放大器的理想组件。

  • Low Side Switching
  • Amplification
  • Automotive Transmission Control Unit
  • Automotive Engine Control Unit
  • Automotive Infotainment
  • 1A IDC, 2A ICM
  • Low VCE(sat): 0.115V @ 1A IC, IC/IB= 10
  • NSV60101DMTWTBG - Wettable Flanks Packaged Device
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • Beta of 180 @ 1ADC, VCE = 2V

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS60101DMTTBG

Contact Sales

Active

CAD Model

Pb

A

H

P

WDFN-6

506AN

1

260

REEL

3000

Y

Dual NPN

Low VCE(sat)

0.18

1

60

60

6

1.1

0.9

90

-

180

2.27

$0.1933

More Details

NSV60101DMTWTBG

Contact Sales

Active

CAD Model

Pb

A

H

P

WDFN-6

506AN

1

260

REEL

3000

Y

Dual NPN

Low VCE(sat)

0.18

1

60

60

6

1.1

0.9

90

-

180

2.27

$0.2133

More Details

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