单 N 沟道,功率 MOSFET,24V,110A,4.6mΩ

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功率 MOSFET,24V,110A,4.6mΩ,单 N 沟道,DPAK

  • This product is general usage and suitable for many different applications
  • Planar HD3e Process for Fast Switching Performance
  • Low RDS(on) to Minimize Conduction Loss
  • Low Ciss to Minimize Driver Loss
  • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
  • Low Gate Charge
  • RoHS Compliant

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产品:

3

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Orderable Parts:

3

产品

状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTD110N02R-001G

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Obsolete

CAD Model

Pb

A

H

P

DPAK INSERTION MOUNT

NA

0

TUBE

75

N

24

4.6

N-Channel

Single

20

2

110

2.88

-

6.2

-

23.6

2710

Price N/A

More Details

NTD110N02RG

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

1

260

TUBE

75

N

24

4.6

N-Channel

Single

20

2

110

2.88

-

6.2

-

23.6

2710

Price N/A

More Details

NTD110N02RT4G

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3

1

260

REEL

2500

N

24

4.6

N-Channel

Single

20

2

110

2.88

-

6.2

-

23.6

2710

Price N/A

More Details

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