单 P 沟道,功率 MOSFET,-20V,-7.7A,40 mΩ

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功率 MOSFET,−20 V,-9.5 A,µCool™ 单 P 沟道,2x2 mm,WDFN 封装

  • DC-DC Converters (Buck and Boost Circuits)
  • Optimized for Battery and Load Management Applications in Portable Equipment
  • High Side Load Switch
  • Cell Phones
  • PDAs
  • Media Players
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
  • 2x2 mm Footprint Same as SC-88 Package
  • Lowest RDS(on) Solution in 2x2 mm Package
  • 1.5 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate Drive
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
  • RoHS Compliant

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTLJS3113PT1G

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

1

5.8

1.9

50

40

2.6

13

1329

Price N/A

More Details

NTLJS3113PTAG

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

1

5.8

1.9

50

40

2.6

13

1329

Price N/A

More Details

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