单 N 沟道,功率 MOSFET,30V,106A,2.1mΩ

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功率 MOSFET,30 V,106 A,单 N 沟道,SO−8 FL

  • CPU Power Delivery
  • Synchronous Rectification for DC−DC Converters
  • Low Side Switching
  • Telecom Secondary Side Rectification
  • Integrated Schottky Diode
  • Low rDS(on) to Minimize Conduction Loss
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • RoHS Compliant

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状况

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMFS4983NFT1G

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Last Shipments

CAD Model

Pb

A

H

P

SO-8FL / DFN-5

1

260

REEL

1500

N

30

2.1

N-Channel

Single

20

2.3

106

3.13

-

3.1

25

22.6

3250

Price N/A

More Details

NTMFS4983NFT3G

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Last Shipments

CAD Model

Pb

A

H

P

SO-8FL / DFN-5

1

260

REEL

5000

N

30

2.1

N-Channel

Single

20

2.3

106

3.13

-

3.1

25

22.6

3250

Price N/A

More Details

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