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宽禁带


碳化硅(SiC)和氮化镓(GaN)是用于高性能电源转换和电机控制的下一代材料。这些宽禁带(WBG)材料将在以下领域推动未来的应用实现高性能:

5G通讯

安森美半导体是领先的电源管理产品供应商之一,正在开发完整的器件生态系统,以支持宽禁带电源设计, 包括SiC二极管和SiC MOSFET、GaN HEMT、 SiC和GaN驱动器及集成模块。

SiC二极管

650V | 1200V | 1700V

SiC MOSFETs

900V | 1200V


最高可靠性:

安森美半导体的SiC器件有专利的端接结构,提供在恶劣的环境条件下更胜一筹的强固性。

H3TRB 测试(高温/湿/偏压), 85C/85% RH/85% V (960V)

强固性:

安森美半导体的肖特基势垒SiC 二极管始终保持最低的漏电流。

SiC二极管强固性 – 反向漏电流

强固性:

SiC二极管强固性 – 浪涌和雪崩


安森美半导体的650V/30A SiC 二极管的浪涌电流波形


安森美半导体的650V/30A SiC 二极管的雪崩电流波形

  • 最高结温Tj-max限制了器件的雪崩能力
  • 故障测试是连续的和可重复的,说明工艺稳定


更高开关频率 | 更低损耗 | 更高能效 | 更高功率密度
更少器件数 | 更小尺寸 | 更轻重量


应用注释 具体说明
AND9691/D SiC MOSFET应用
AND9932/D NCP51820 GaN驱动器、PCB设计 和布板
设计注释 具体说明
DN05067/D GaN HEMT用于一体式工作站电源
DN05107/D 3KW车载充电
白皮书 具体说明
TND6237/D SiC MOSFETs: 门极驱动优化
TND6260/D 基于物理的、可扩展SPICE 建模方法
仿真模型 具体说明
SiC二极管仿真模型
培训教材 具体说明
WVD17218/D 宽禁带生态系统快速开关和颠覆性的 仿真环境
视频 具体说明
WVD17183/D 宽禁带演示

宽禁带用于服务器和工业 电源应用

设计支援:

我们提供物理SPICE模型 , 帮助设计工程师在仿真中实现其应用性能而无需昂贵的测量周期。我们的预测型分立建模支持系统级仿真,其中器件可针对系统级品质因数如能效而优化,而不仅仅是器件级的品质因数如RDS(on)。


标准:

安森美半导体是JEDEC宽禁带标准委员会 的成员之一。我们正在为制定通用标准贡献一己之力,以帮助推进宽禁带(WBG)电源技术的采用。

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