Evaluation Board | FEBFAN6604MR-CH11U65A-GEVB

With the internal high-voltage startup circuitry, the power loss due to bleeding resistors is also eliminated. To further reduce power consumption, FEBFAN6604MR-CH11U65A-GEVB is manufactured by using the BiCMOS process. This allows an operating current of 1.7 mA and low startup current of 30 ?A. Built-in synchronized slope compensation ensures the stability of Peak Current Mode control.