The NCP81075 is a high performance dual MOSFET gate driver optimized to drive the gates of both high and low side power MOSFETs in a synchronous buck converter. The NCP81075 uses an on−chip bootstrap diode to eliminate the external discrete diode. A high floating top driver design can accommodate HB voltage as high as 180 V. The low−side and high−side are independently controlled and match to 4 ns between the turn−on and turn−off of each other. Independent Under−Voltage lockout is provided for the high side and low side driver forcing the output low when the drive voltage is below a specific threshold.
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NCP81075GEVB Schematic
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Eval Board: Schematic
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Eval Board: Schematic
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NCP81075GEVB Test Procedure
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NCP81075GEVB_GERBER
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NCP81075GEVB Bill of Materials
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