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LM258, LM358, LM358A, LM358E, LM2904, LM2904A, LM2904E, LM2904V, NCV2904

Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain,a common mode input voltage range extending to ground/VEE, and single supply or split supply operation. The LM358 series is equivalent to one−half of an LM324.


1N91x, 1N4x48, FDLL914, FDLL4x48

Small Signal Diode


2N7000/2N7002/NDS7002A N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.


MC7800, MC7800A, MC7800AE, NCV7800

These voltage regulators are monolithic integrated circuits designed as fixed−voltage regulators for a wide variety of applications including local, on−card regulation. These regulators employ internal current limiting, thermal shutdown, and safe−area compensation.


Axial-Lead Glass Passivated Standard Recovery Rectifiers

This data sheet provides information on subminiature size, axial lead mounted rectifiers for general−purpose low−power applications.


NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

The NCS210R, NCS211R, NCS213R and NCS214R are voltage output, current shunt monitors (also called current sense amplifiers) which can measure voltage across shunts at common−mode voltages from −0.3 V to 26 V, independent of supply voltage.


High-Density AC−DC Power Supplies using Active−Clamp Flyback Topology

This paper introduces the principle of operation of the active clamp flyback topology along with its merits and demerits. Also, a technique to improve its light load efficiency and standby power to pass various regulatory standards is presented.


SiC MOSFETs: Gate Drive Optimization

For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs.Switching high−voltage power rails in excess of 1,000 V,operating at hundreds of kHz is non−trivial and beyond the capabilities of even the best super junction silicon MOSFETs.


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