音频晶体管 | MJ21195

Bipolar Transistor, PNP, 250 V, 16 A

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概览

The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.

  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 3 A, 80 V, 1 Second
  • Pb-Free Packages are Available

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Polarity

IC Continuous (A)

VCEO(sus) Min (V)

hFE Min

hFE Max

PTM Max (W)

fT Min (MHz)

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MJ21195G

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量产中

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Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

Yes

PNP

16

250

25

75

250

5

39.37 x 26.67 x 7.43

$4.42

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可靠性数据

Die Related Summary Data

Device: MJ21195G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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