Darlington Transistors | 2N6034

4.0 A，40 V PNP 达林顿双极功率晶体管

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概览

该 4 A 80 V NPN 达林顿双极功率晶体管适用于通用放大器和低速开关应用。

  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc
    VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038
    VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current Capability
    IS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-Emitter
    Resistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost Ratio
    TO-225AA Plastic Package
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Package Size (mm)

参考价格

2N6034

联系销售

已停产

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

PNP

4

40

2

0.75

15

25

Price N/A

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2N6034G

联系销售

已停产

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

PNP

4

40

2

0.75

15

25

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: 2N6034G

Equivalent to wafer fab process: BPT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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